Electronic Devices Research Articles

Lead placement in cardiac implantable electronic devices

The implantation of electrodes for cardiac implantable electronic devices (CIED) requires profound technical understanding and precise execution. The positioning of electrodes in the right ventricle and atrium has significant implications for patient safety and the effectiveness of CIED therapy. Particular focus is given to the distinction between apical and septal stimulation in ventricular positioning. Based on current data, this article provides apractice-oriented guide that leads implanters through the individual steps of electrode positioning. The implantation of electrodes for physiological stimulation (cardiac resynchronization therapy, CRT, and conduction system pacing, CSP) is not addressed in this article.

Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy.

The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi2O2Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe's electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer to modify BOSe's band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.

Investigation of the Single-Particle Scale Structure-Activity Relationship Providing New Insights for the Development of High-Performance Batteries.

As electric vehicles, portable electronic devices and tools have increasingly high requirements for battery energy density and power density, constantly improving battery performance has become a research focus. Accurate measurement of the structure-activity relationship of active materials is the key to advancing the research of high-performance batteries. However, the conventional performance tests of active materials are based on the electrochemical measurement of porous composite electrodes containing active materials, polymer binders, and conductive carbon additives, which cannot establish an accurate structure-activity relationship with the physical characterization of microregions. In this review, in order to promote the accurate measurement and understanding of the structure-activity relationship of materials, the electrochemical measurement and physical characterization of energy storage materials at single-particle scale are reviewed. The potential problems and possible improvement schemes of the single particle electrochemical measurement and physical characterization are proposed. Their potential applications in single particle electrochemical simulation and machine learning are prospected. This review aims to promote the further application of single particle electrochemical measurement and physical characterization in energy storage materials, hoping to achieve three-dimensional unified evaluation of physical characterization, electrochemical measurement, and theoretical simulation at the single particle scale to provide new inspiration for the development of high-performance batteries. This article is protected by copyright. All rights reserved.

Stretchable electronic strips for electronic textiles enabled by 3D helical structure

The development of stretchable electronic devices is a critical area of research for wearable electronics, particularly electronic textiles (e-textiles), where electronic devices embedded in clothing need to stretch and bend with the body. While stretchable electronics technologies exist, none have been widely adopted. This work presents a novel and potentially transformative approach to stretchable electronics using a ubiquitous structure: the helix. A strip of flexible circuitry (‘e-strip’) is twisted to form a helical ribbon, transforming it from flexible to stretchable. A stretchable core—in this case rubber cord—supports the structure, preventing damage from buckling. Existing helical electronics have only extended to stretchable interconnects between circuit modules, and individual components such as printed helical transistors. Fully stretchable circuits have, until now, only been produced in planar form: flat circuits, either using curved geometry to enable them to stretch, or using inherently stretchable elastomer substrates. Helical e-strips can bend along multiple axes, and repeatedly stretch between 30 and 50%, depending on core material and diameter. LED and temperature sensing helical e-strips are demonstrated, along with design rules for helical e-strip fabrication. Widely available materials and standard fabrication processes were prioritized to maximize scalability and accessibility.

π-Conjugated Nanohoops: A new generation of curved materials for organic electronics.

Nanohoops, cyclic association of π-conjugated systems to form a hoop-shaped molecule, have been widely developed in the last 15 years. Beyond the synthetic challenge, the strong interest towards these molecules arise from their radially-oriented π-orbitals, which provide singular properties to these fascinating structures. Thanks to their particular cylindrical arrangement, this new generation of curved molecules have been already used in many applications such as host-guest complexation, biosensing, bioimaging, solid-state emission and catalysis. However, their potential in organic electronics has only started to be explored. From the first incorporation as an emitter in fluorescent Organic Light Emitting Diode (OLED), to the recent first incorporation as host in Phosphorescent OLED or as charge transporter in Organic Field-Effect Transistor (OFET) and in Organic Photovoltaics (OPV), this field has shown important breakthroughs in recent years. These finding have revealed that curved materials can play a key role in the future and can even be more efficient than their linear counterparts. This can have important repercussions for the future of electronics. Time is now come to overview the different nanohoops used to date in electronic devices in order to stimulate the future molecular designs of functional materials based on these macrocycles.

Latest developments and trends in electronic skin devices

Latest developments and trends in electronic skin devices

Chiral Stacking Identification of Two-Dimensional Triclinic Crystals Enabled by Machine Learning.

Chiral materials possess broken inversion and mirror symmetry and show great potential in the application of next-generation optic, electronic, and spintronic devices. Two-dimensional (2D) chiral crystals have planar chirality, which is nonsuperimposable on their 2D enantiomers by any rotation about the axis perpendicular to the substrate. The degree of freedom to construct vertical stacking of 2D monolayer enantiomers offers the possibility of chiral manipulation for designed properties by creating multilayers with either a racemic or enantiomerically pure stacking order. However, the rapid recognition of the relative proportion of two enantiomers becomes demanding due to the complexity of stacking orders of 2D chiral crystals. Here, we report the unambiguous identification of racemic and enantiomerically pure stackings for layered ReSe2 and ReS2 using circular polarized Raman spectroscopy. The chiral Raman response is successfully manipulated by the enantiomer proportion, and the stacking orders of multilayer ReSe2 and ReS2 can be completely clarified with the help of second harmonic generation and scanning transmission electron microscopy measurements. Finally, we trained an artificial intelligent Spectra Classification Assistant to predict the chirality and the complete crystallographic structures of multilayer ReSe2 from a single circular polarized Raman spectrum with the accuracy reaching 0.9417 ± 0.0059.

Evaluating the Non-Invasive Measurement of Apple Aroma Using Electronic Nose Device through Comparison with Direct Mass Spectrometry, Sugar Content, and Ripeness Measurements

Evaluating the Non-Invasive Measurement of Apple Aroma Using Electronic Nose Device through Comparison with Direct Mass Spectrometry, Sugar Content, and Ripeness Measurements

Electronic mechanical braking system executive mechanism design, calculation, and modeling based on dynamic control

Electronic mechanical braking system executive mechanism design, calculation, and modeling based on dynamic control

Symmetry Engineering of Epitaxial Hf0.5Zr0.5O2 Ultrathin Films.

Robust ferroelectricity in HfO2-based ultrathin films has the potential to revolutionize nonvolatile memory applications in nanoscale electronic devices because of their compatibility with the existing Si technology. However, to fully exploit the potential of ferroelectric HfO2-based thin films, it is crucial to develop strategies for the controlled stabilization of various HfO2-based polymorphs in nanoscale heterostructures. This study demonstrates how substrate-orientation-induced anisotropic strain can engineer the crystal symmetry, structural domain morphology, and growth orientation of ultrathin Hf0.5Zr0.5O2 (HZO) films. Epitaxial ultrathin HZO films were grown on the heterostructures of (001)- and (110)-oriented La2/3Sr1/3MnO3/SrTiO3 (LSMO/STO) substrate. Various structural analyses revealed that the (110)-oriented substrate promotes a higher degree of structural order (crystallinity) with improved stability of the (111)-oriented orthorhombic phase (Pca21) of HZO. Conversely, the (001)-oriented substrate not only induces a distorted orthorhombic structure but also facilitates the partial stabilization of nonpolar phases. Electrical measurements revealed robust ferroelectric properties in epitaxial thin films without any wake-up effect, where the well-ordered crystal symmetry stabilized by STO(110) facilitated better ferroelectric characteristics. This study suggests that tuning the epitaxial growth of ferroelectric HZO through substrate orientation can improve the stability of the metastable ferroelectric orthorhombic phase and thereby offer a better understanding of device applications.

Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers

Semiconductor heterojunctions are ubiquitous components of modern electronics. Their properties depend crucially on the band alignment at the interface, which may exhibit straddling gap (type-I), staggered gap (type-II) or broken gap (type-III). The distinct characteristics and applications associated with each alignment make it highly desirable to switch between them within a single material. Here we demonstrate an electrically tunable transition between type-I and type-II band alignments in MoSe2/WS2 heterobilayers by investigating their luminescence and photocurrent characteristics. In their intrinsic state, these heterobilayers exhibit a type-I band alignment, resulting in the dominant intralayer exciton luminescence from MoSe2. However, the application of a strong interlayer electric field induces a transition to a type-II band alignment, leading to pronounced interlayer exciton luminescence. Furthermore, the formation of the interlayer exciton state traps free carriers at the interface, leading to the suppression of interlayer photocurrent and highly nonlinear photocurrent-voltage characteristics. This breakthrough in electrical band alignment control, interlayer exciton manipulation, and carrier trapping heralds a new era of versatile optical and (opto)electronic devices composed of van der Waals heterostructures.

Fast switching hydrogen gas leakage identification using FPGA

Hydrogen will play a key part in the decarbonization of the global energy supply as the wealth of hydrogen continues to rise. However, applying hydrogen knowledge necessitates the installation of strong safety protocols, including the use of reliable hydrogen gas-detecting devices. Gas detection and monitoring at a large scale in industries need programmable electronic systems that can provide fast response and switching. The objective of the research work is to analyze the hydrogen gas detection system using a field programmable gate array (FPGA). The system is integrated with the gas sensor module, temperature control module, buzzer for alarm, liquid crystal display (LCD) and light-emitting diode (LED) for information display, and global system for mobile communication (GSM) for wireless message communication to the mobile. The temperatures module works on the sampling of the heater resistance using a voltage divider and inbuilt analog-to-digital converter (ADC), which depend on the output voltage of the digital-to-analog converter (DAC). The comparator module compares the gas concentration with the pre-decided threshold limit and acknowledges the buzzer accordingly. The system behavior for monitoring and gas concentration detection is simulated in Xilinx Vivado design suite 2020.1. The functionality of the chip is also verified in the Modelsim 10.0 waveform simulator. for the testbench tata sand samples used. LCD (16x2) displays the messages whether hydrogen gas is detected or not and the same message is delivered on mobile. The novelty of the work is that the system is applicable for faster switching in industrial applications and the designed system supported 550 MHz frequency in our simulation and synthesis.

The impact of the world’s first regulatory, multi-setting intervention on sedentary behaviour among children and adolescents (ENERGISE): a natural experiment evaluation

BackgroundRegulatory actions are increasingly used to tackle issues such as excessive alcohol or sugar intake, but such actions to reduce sedentary behaviour remain scarce. World Health Organization (WHO) guidelines on sedentary behaviour call for system-wide policies. The Chinese government introduced the world’s first nation-wide multi-setting regulation on multiple types of sedentary behaviour in children and adolescents in July 2021. This regulation restricts when (and for how long) online gaming businesses can provide access to pupils; the amount of homework teachers can assign to pupils according to their year groups; and when tutoring businesses can provide lessons to pupils. We evaluated the effect of this regulation on sedentary behaviour safeguarding pupils.MethodsWith a natural experiment evaluation design, we used representative surveillance data from 9- to 18-year-old pupils before and after the introduction of the regulation, for longitudinal (n = 7,054, matched individuals, primary analysis) and repeated cross-sectional (n = 99,947, exploratory analysis) analyses. We analysed pre-post differences for self-reported sedentary behaviour outcomes (total sedentary behaviour time, screen viewing time, electronic device use time, homework time, and out-of-campus learning time) using multilevel models, and explored differences by sex, education stage, residency, and baseline weight status.ResultsLongitudinal analyses indicated that pupils had reduced their mean total daily sedentary behaviour time by 13.8% (95% confidence interval [CI]: -15.9 to -11.7%, approximately 46 min) and were 1.20 times as likely to meet international daily screen time recommendations (95% CI: 1.01 to 1.32) one month after the introduction of the regulation compared to the reference group (before its introduction). They were on average 2.79 times as likely to meet the regulatory requirement on homework time (95% CI: 2.47 to 3.14) than the reference group and reduced their daily total screen-viewing time by 6.4% (95% CI: -9.6 to -3.3%, approximately 10 min). The positive effects were more pronounced among high-risk groups (secondary school and urban pupils who generally spend more time in sedentary behaviour) than in low-risk groups (primary school and rural pupils who generally spend less time in sedentary behaviour). The exploratory analyses showed comparable findings.ConclusionsThis regulatory intervention has been effective in reducing total and specific types of sedentary behaviour among Chinese children and adolescents, with the potential to reduce health inequalities. International researchers and policy makers may explore the feasibility and acceptability of implementing regulatory interventions on sedentary behaviour elsewhere.

Fundamentals and emerging optical applications of hexagonal boron nitride: a tutorial

Hexagonal boron nitride (hBN), also known as white graphite, is a transparent layered crystal with a wide bandgap. Its crystal structure resembles graphite, featuring layers composed of honeycomb lattices held together through van der Waals forces. The layered crystal structure of hBN facilitates exfoliation into thinner flakes and makes it highly anisotropic in in-plane and out-of-plane directions. Unlike graphite, hBN is both insulating and transparent, making it an ideal material for isolating devices from the environment and acting as a waveguide. As a result, hBN has found extensive applications in optical devices, electronic devices, and quantum photonic devices. This comprehensive tutorial aims to provide readers with a thorough understanding of hBN, covering its synthesis, lattice and spectroscopic characterization, and various applications in optoelectronic and quantum photonic devices. This tutorial is designed for both readers without prior experience in hBN and those with expertise in specific fields seeking to understand its relevance and connections to others.

Modeling of MoS2/Si heterostructure to study charge transfer dynamics

Abstract Here, we synthesized a MoS₂/Si heterojunction device using a scalable approach involving DC sputtering copuled with sulfurization. The observed current-voltage characteristics unequivocally indicate a rectifying behavior at MoS₂/Si heterointerface. To quantitatively assess the carrier dynamics, a comprehensive analysis utilizing thermionic emission and Landauer transport formalism model was employed. The spatial variation in current across the MoS₂/Si devices suggests a potential influence of MoS₂'s in-plane series resistance. Furthermore, the electrical behavior of the device is found to be temperature-dependent, with higher temperatures resulting in enhanced conductivity attributed to an increase in thermally generated charge carriers. As temperature rises, the Landauer current model observes an increased ratio of density of states to carrier injection rate, along with other temperature-dependent terms. Meanwhile, the thermionic current model maintains a fixed effective value for its material-dependent term, the Richardson constant, irrespective of temperature changes. Therefore, a comparative analysis between thermionic emission and Landauer transport formalism reveals that the conventional thermionic emission model better aligns with experimentally observed leakage current in reverse bias, showcasing a minimal barrier height at the heterojunction. This comprehensive investigation provides valuable insights into the charge transfer mechanisms at the MoS₂/Si interface, opening avenues for its potential innovative applications in electronic devices.

Dynamic Marine Atmospheric Corrosion Behavior of AZ91 Mg Alloy Sailing from Yellow Sea to Western Pacific Ocean

In this work, the dynamic marine atmospheric corrosion behavior of AZ91 Mg alloy sailing from Yellow Sea to Western Pacific Ocean was studied. The corrosion rates were measured using the weight loss method. The microstructure, phase, and chemical composition of corroded samples were investigated by SEM, EDS, XRD, and XPS. The results show that the evolution of corrosion rates of AZ91 Mg alloy was divided into three stages: rapidly increasing during the first 3 months, then remaining stable for the next three months, and finally decreasing after 6 months. The annual corrosion rate of Mg alloy reached 32.50 μm/y after exposure for 12 months in a dynamic marine atmospheric environment, which was several times higher than that of the static field exposure tests. AZ91 magnesium alloy was mainly subjected to localized corrosion with more destructiveness to Mg parts, which is mainly due to the synergistic effect of high relative humidity, the high deposition rate of chloride ion, sulfur dioxide acidic gas produced by fuel combustion, and rapid temperature changes caused by the alternating changes in longitude and latitude during navigation. As the exposure time increased, the corrosion pits gradually increased and deepened. The maximum depth of the corrosion pit was 197 μm after 12 months of exposure, which is almost 6 times the average corrosion depth. This study provides scientific data support for the application of magnesium alloys in shipborne aircraft and electronic equipment. The results could provide guidance for the design of new magnesium alloys and development of anti-corrosion technologies.

In situ/Operando Synchrotron Radiation Analytical Techniques for CO2/CO Reduction Reaction: From Atomic Scales to Mesoscales

AbstractElectrocatalytic carbon dioxide/carbon monoxide reduction reaction (CO(2)RR) has emerged as a prospective and appealing strategy to realize carbon neutrality for manufacturing sustainable chemical products. Developing highly active electrocatalysts and stable devices has been demonstrated as effective approach to enhance the conversion efficiency of CO(2)RR. In order to rationally design electrocatalysts and devices, a comprehensive understanding of the intrinsic structure evolution within catalysts and micro‐environment change around electrode interface, particularly under operation conditions, is indispensable. Synchrotron radiation has been recognized as a versatile characterization platform, garnering widespread attention owing to its high brightness, elevated flux, excellent directivity, strong polarization and exceptional stability. This review systematically introduces the applications of synchrotron radiation technologies classified by radiation sources with varying wavelengths in CO(2)RR. By virtue of in situ/operando synchrotron radiationanalytical techniques, we also summarize relevant dynamic evolution processes from electronic structure, atomic configuration, molecular adsorption, crystal lattice and devices, spanning scales from the angstrom to the micrometer. The merits and limitations of diverse synchrotron characterization techniques are summarized, and their applicable scenarios in CO(2)RR are further presented. On the basis of the state‐of‐the‐art fourth‐generation synchrotron facilities, a perspective for further deeper understanding of the CO(2)RR process using synchrotron radiation analytical techniques is proposed.

Synergies and applications of polyimides featured low permittivity and high thermal conductivity

Abstract The continuous upgrading of electronic technology has facilitated the integration and miniaturization of electronic and electrical equipment, as well as putting great pressure on the multifunctional demand for internal materials. Developing insulating materials with both low permittivity and high thermal conductivity has become imperative. This perspective focuses on polyimide, which is the top material of the polymer material pyramid, discusses the characteristic parameters that affect its dielectric property and thermal conductivity. A series of basic schemes to regulate the dielectric/thermal properties of polyimide are summarized, revealing the bottlenecks and drawbacks of the current research. Future development trends of polyimides featured low permittivity-high thermal conductivity are anticipated, and novel ideas are proposed for the development of new generation of multifunctional polyimides.

Amorphous lithiophilic cobalt‐boride@rGO interlayer for dendrite‐free and highly stable lithium metal batteries

AbstractLithium metal batteries (LMBs) are recognized to be crucial for secondary battery technology targeting electric vehicles and portable electronic devices. However, the undesirable growth of lithium dendrites would result in reduced capacity, short‐circuit, and overheating, seriously hindering the practical applications of LMBs. To address this issue, a neoteric lithiophilic interlayer on a commercial polypropylene separator is presented for the first time, which is constructed by amorphous CoB nanoparticles decorated reduced graphene oxide nanosheets (CoB@rGO). Density Functional Theory calculations and experimental analysis reveal remarkable lithiophilicity features for CoB@rGO and provide multiple Li deposition sites and improved electrolyte wettability, which facilitates the formation of durable solid electrolyte interphase (SEI), reduces side reactions, and improves Li+ flux regulation for long‐term cycling stability in LMBs. Taking advantage of these merits, the symmetric Li//Li cell with CoB@rGO/PP separator exhibits stable cycling for up to 1600 h at 1 mA cm−2 with 1 mAh cm−2. Employed with CoB@rGO separator, the Li//LiFePO4 full cell with a high LiFePO4 loading of 11 mg cm−2 delivers a high initial specific capacity of 115.3 mAh g−1 and a low decay rate of 0.08% per cycle after 200 cycles even at a high rate of 2C.

Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer

Oxide semiconductors have gained significant attention in electronic device industry due to their high potential for emerging thin-film transistor (TFT) applications. However, electrical contact properties such as specific contact resistivity (ρC) and width-normalized contact resistance (RCW) are significantly inferior in oxide TFTs compared to conventional silicon metal oxide semiconductor field-effect transistors. In this study, a multi-stack interlayer (IL) consisting of titanium nitride (TiN) and indium-gallium-tin-oxide (IGTO) is inserted between source/drain electrodes and amorphous indium-gallium-zinc-oxide (IGZO). The TiN is introduced to increase conductivity of the underlying layer, while IGTO acts as an n+-layer. Our findings reveal IGTO thickness (tIGTO)-dependent electrical contact properties of IGZO TFT, where ρC and RCW decrease as tIGTO increases to 8 nm. However, at tIGTO > 8 nm, they increase mainly due to IGTO crystallization-induced contact interface aggravation. Consequently, the IGZO TFTs with a TiN/IGTO (3/8 nm) IL reveal the lowest ρC and RCW of 9.0 × 10−6 Ω·cm2 and 0.7 Ω·cm, significantly lower than 8.0 × 10−4 Ω·cm2 and 6.9 Ω·cm in the TFTs without the IL, respectively. This improved electrical contact properties increases field-effect mobility from 39.9 to 45.0 cm2/Vs. This study demonstrates the effectiveness of this multi-stack IL approach in oxide TFTs.